November 26, 2025 Bachelor Thesis Open Access

Gruhn, Frederick

MARC21 XML Export

<?xml version='1.0' encoding='UTF-8'?>
<record xmlns="http://www.loc.gov/MARC21/slim">
  <leader>00000nam##2200000uu#4500</leader>
  <datafield tag="520" ind1=" " ind2=" ">
    <subfield code="a">&lt;p&gt;In this thesis, the impact of X-ray irradiation on Si-Ge Hetero Junction Bipolar Transistor (HBT) technology is investigated. For this purpose, Q-Band amplifier chips using SG13G3Cu transistors technology, manufactured by the Leibniz Institute for High Performance Microelectronics (IHP), were used. To quantify the irradiation-induced damage, the following figures of merit were examined: the forward Gummel characteristics (I-V curve), the Early voltage/output resistance, and the power consumption of the chip. The chips were irradiated with X-ray doses ranging from 25 kGy to 200 kGy. The results demonstrate a robust tolerance to ionizing irradiation up to and beyond a Total Ionizing Dose (TID) of&amp;nbsp;200 kGy.&lt;/p&gt;</subfield>
  </datafield>
  <datafield tag="542" ind1=" " ind2=" ">
    <subfield code="l">open</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2=" ">
    <subfield code="s">14255895</subfield>
    <subfield code="u">https://publish.etp.kit.edu/record/22393/files/Impact_of_X_Ray_irradiation_on_Silicon_Germanium_HBT_s_final_version.pdf</subfield>
    <subfield code="z">md5:b5a91ea30a89530df4bd8847eac8e80b</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">thesis</subfield>
    <subfield code="b">bachelor-thesis</subfield>
  </datafield>
  <controlfield tag="005">20260202133834.0</controlfield>
  <datafield tag="041" ind1=" " ind2=" ">
    <subfield code="a">eng</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="O">
    <subfield code="o">oai:publish.etp.kit.edu:22393</subfield>
    <subfield code="p">user-hardware</subfield>
    <subfield code="p">user-etp</subfield>
  </datafield>
  <datafield tag="260" ind1=" " ind2=" ">
    <subfield code="c">2025-11-26</subfield>
  </datafield>
  <datafield tag="245" ind1=" " ind2=" ">
    <subfield code="a">Investigating the impact of X-Ray irradiation on Silicon-Germanium Hetero junction Bipolar Transistors (HBTs)</subfield>
  </datafield>
  <datafield tag="100" ind1=" " ind2=" ">
    <subfield code="a">Gruhn, Frederick</subfield>
    <subfield code="u">KIT/ETP</subfield>
  </datafield>
  <controlfield tag="001">22393</controlfield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Husemann, Ulrich</subfield>
    <subfield code="u">KIT/ETP</subfield>
    <subfield code="4">ths</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Dierlamm, Alexander</subfield>
    <subfield code="u">KIT/ETP</subfield>
    <subfield code="4">ths</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">user-etp</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">user-hardware</subfield>
  </datafield>
</record>