November 26, 2025 Bachelor Thesis Open Access

Gruhn, Frederick

JSON-LD (schema.org) Export

{
  "@context": "https://schema.org/", 
  "@type": "ScholarlyArticle", 
  "contributor": [], 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "KIT/ETP", 
      "name": "Gruhn, Frederick"
    }
  ], 
  "datePublished": "2025-11-26", 
  "description": "<p>In this thesis, the impact of X-ray irradiation on Si-Ge Hetero Junction Bipolar Transistor (HBT) technology is investigated. For this purpose, Q-Band amplifier chips using SG13G3Cu transistors technology, manufactured by the Leibniz Institute for High Performance Microelectronics (IHP), were used. To quantify the irradiation-induced damage, the following figures of merit were examined: the forward Gummel characteristics (I-V curve), the Early voltage/output resistance, and the power consumption of the chip. The chips were irradiated with X-ray doses ranging from 25 kGy to 200 kGy. The results demonstrate a robust tolerance to ionizing irradiation up to and beyond a Total Ionizing Dose (TID) of&nbsp;200 kGy.</p>", 
  "headline": "Investigating the impact of X-Ray irradiation on Silicon-Germanium Hetero junction Bipolar Transistors (HBTs)", 
  "image": "https://publish.etp.kit.edu/static/img/logos/zenodo-gradient-round.svg", 
  "inLanguage": {
    "@type": "Language", 
    "alternateName": "eng", 
    "name": "English"
  }, 
  "name": "Investigating the impact of X-Ray irradiation on Silicon-Germanium Hetero junction Bipolar Transistors (HBTs)", 
  "url": "https://publish.etp.kit.edu/record/22393"
}