Bachelor Thesis Open Access

Investigating the impact of X-Ray irradiation on Silicon-Germanium Hetero junction Bipolar Transistors (HBTs)

Gruhn, Frederick

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  <dc:creator>Gruhn, Frederick</dc:creator>
  <dc:date>2025-11-26</dc:date>
  <dc:description>In this thesis, the impact of X-ray irradiation on Si-Ge Hetero Junction Bipolar Transistor (HBT) technology is investigated. For this purpose, Q-Band amplifier chips using SG13G3Cu transistors technology, manufactured by the Leibniz Institute for High Performance Microelectronics (IHP), were used. To quantify the irradiation-induced damage, the following figures of merit were examined: the forward Gummel characteristics (I-V curve), the Early voltage/output resistance, and the power consumption of the chip. The chips were irradiated with X-ray doses ranging from 25 kGy to 200 kGy. The results demonstrate a robust tolerance to ionizing irradiation up to and beyond a Total Ionizing Dose (TID) of 200 kGy.</dc:description>
  <dc:identifier>https://publish.etp.kit.edu/record/22393</dc:identifier>
  <dc:identifier>oai:publish.etp.kit.edu:22393</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>url:https://publish.etp.kit.edu/communities/etp</dc:relation>
  <dc:relation>url:https://publish.etp.kit.edu/communities/hardware</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:title>Investigating the impact of X-Ray irradiation on Silicon-Germanium Hetero junction Bipolar Transistors (HBTs)</dc:title>
  <dc:type>info:eu-repo/semantics/bachelorThesis</dc:type>
  <dc:type>thesis-bachelor-thesis</dc:type>
</oai_dc:dc>
Publication date:
November 26, 2025
Awarding University:
Karlsruhe Institute of Technology (KIT)
Report Number:
ETP-BACHELOR-KA/2025-36
Communities:

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