November 26, 2025 Bachelor Thesis Open Access

Gruhn, Frederick

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{
  "abstract": "<p>In this thesis, the impact of X-ray irradiation on Si-Ge Hetero Junction Bipolar Transistor (HBT) technology is investigated. For this purpose, Q-Band amplifier chips using SG13G3Cu transistors technology, manufactured by the Leibniz Institute for High Performance Microelectronics (IHP), were used. To quantify the irradiation-induced damage, the following figures of merit were examined: the forward Gummel characteristics (I-V curve), the Early voltage/output resistance, and the power consumption of the chip. The chips were irradiated with X-ray doses ranging from 25 kGy to 200 kGy. The results demonstrate a robust tolerance to ionizing irradiation up to and beyond a Total Ionizing Dose (TID) of&nbsp;200 kGy.</p>", 
  "author": [
    {
      "family": "Gruhn, Frederick"
    }
  ], 
  "id": "22393", 
  "issued": {
    "date-parts": [
      [
        2025, 
        11, 
        26
      ]
    ]
  }, 
  "language": "eng", 
  "title": "Investigating the impact of X-Ray irradiation on Silicon-Germanium Hetero junction Bipolar Transistors (HBTs)", 
  "type": "thesis"
}