November 26, 2025 Bachelor Thesis Open Access

Gruhn, Frederick

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        "affiliation": "KIT/ETP", 
        "name": "Gruhn, Frederick"
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    "description": "<p>In this thesis, the impact of X-ray irradiation on Si-Ge Hetero Junction Bipolar Transistor (HBT) technology is investigated. For this purpose, Q-Band amplifier chips using SG13G3Cu transistors technology, manufactured by the Leibniz Institute for High Performance Microelectronics (IHP), were used. To quantify the irradiation-induced damage, the following figures of merit were examined: the forward Gummel characteristics (I-V curve), the Early voltage/output resistance, and the power consumption of the chip. The chips were irradiated with X-ray doses ranging from 25 kGy to 200 kGy. The results demonstrate a robust tolerance to ionizing irradiation up to and beyond a Total Ionizing Dose (TID) of&nbsp;200 kGy.</p>", 
    "language": "eng", 
    "publication_date": "2025-11-26", 
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      "subtype": "bachelor-thesis", 
      "title": "Bachelor Thesis", 
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      "report_number": "ETP-BACHELOR-KA/2025-36", 
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          "name": "Husemann, Ulrich"
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        {
          "affiliation": "KIT/ETP", 
          "name": "Dierlamm, Alexander"
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    "title": "Investigating the impact of X-Ray irradiation on Silicon-Germanium Hetero junction Bipolar Transistors (HBTs)"
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