Investigation of Radiation Damage in Silicon Sensors for the Phase-2 Upgrade of the CMS Outer Tracker

This works deals with irradiation tests in the course of the production of new silicon strip sensors for the CMS-Outer-Tracker. The second main part of the thesis deals with the strip isolation of n-on-p silicon strip sensors. A focus is set on the behaviour after irradiation. In addition, a TCAD defect model has been developed that is able to replicate the measurements and can make predictions of the strip isolation.